IXFA3N120 - IXYS

Manufacturer Part Number

IXFA3N120

Manufacturer

IXYS Corporation

Introduction

The IXFA3N120 is a high-performance N-channel MOSFET transistor suitable for various power electronics applications.

Product Features and Performance

Drain to Source Voltage (Vdss): 1200 V

Continuous Drain Current (Id) @ 25°C: 3A (Tc)

On-State Resistance (Rds On): 4.5 Ohm @ 1.5A, 10V

Input Capacitance (Ciss): 1050 pF @ 25 V

Power Dissipation (Max): 200W (Tc)

Gate Charge (Qg): 39 nC @ 10 V

Product Advantages

High voltage rating of 1200 V

Low on-state resistance for efficient power handling

Suitable for high-power, high-frequency applications

Key Technical Parameters

FET Type: N-Channel MOSFET

Vgs (Max): ±20V

Vgs(th) (Max) @ Id: 5V @ 1.5mA

Operating Temperature: -55°C ~ 150°C (TJ)

Quality and Safety Features

ROHS3 compliant

Suitable for surface mount applications

Compatibility

Mounting Type: Surface Mount

Package: TO-263-3, DPak (2 Leads + Tab), TO-263AB

Application Areas

Power electronics

Motor drives

Inverters

Converters

Switching power supplies

Product Lifecycle

The IXFA3N120 is an active product, with no indication of discontinuation.

Replacement or upgrade options may be available from IXYS Corporation.

Key Reasons to Choose This Product

High voltage rating of 1200 V for demanding applications

Low on-state resistance for efficient power handling

Suitable for high-power, high-frequency applications

ROHS3 compliant and surface mount compatible

Extensive application areas in power electronics