IXFA180N10T2 - IXYS

Manufacturer Part Number

IXFA180N10T2

Manufacturer

IXYS Corporation

Introduction

High-performance N-channel MOSFET transistor with low on-resistance and high power handling capability.

Product Features and Performance

Extremely low on-resistance of 6 mΩ at 50 A, 10 V

Continuous drain current of 180 A at 25°C case temperature

Maximum drain-to-source voltage of 100 V

Wide operating temperature range of -55°C to 175°C

Fast switching speed with low gate charge of 185 nC at 10 V

Product Advantages

Excellent thermal management with low junction-to-case thermal resistance

Robust and reliable design for demanding applications

Optimized for high-power, high-efficiency switch-mode power supplies and motor drives

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 100 V

Gate-to-Source Voltage (Vgs): ±20 V

Continuous Drain Current (Id) @ 25°C: 180 A

On-Resistance (Rds(on)) @ 50 A, 10 V: 6 mΩ

Input Capacitance (Ciss) @ 25 V: 10,500 pF

Power Dissipation (Tc) @ 25°C: 480 W

Quality and Safety Features

RoHS3 compliant

Qualified to AEC-Q101 standards for automotive applications

Compatibility

Compatible with standard MOSFET gate drive circuits

Suitable for various power conversion and motor control applications

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Uninterruptible power supplies (UPS)

Electric vehicles and hybrid electric vehicles

Product Lifecycle

This product is an active and widely available MOSFET transistor from IXYS Corporation.

Replacement and upgrade options are readily available from IXYS and other manufacturers.

Key Reasons to Choose This Product

Extremely low on-resistance for high efficiency and power density

High current handling capability up to 180 A

Wide operating temperature range for robust and reliable performance

Fast switching speed and low gate charge for high-frequency applications

Proven and reliable design qualified for automotive and industrial use