IXFA10N80P - IXYS

Manufacturer Part Number

IXFA10N80P

Manufacturer

IXYS Corporation

Introduction

High-performance N-channel MOSFET transistor

Part of the HiPerFET and Polar series

Product Features and Performance

High drain-source voltage rating of 800V

Low on-state resistance of 1.1Ω @ 5A, 10V

High current rating of 10A (Tc)

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 2050pF @ 25V

High power dissipation of 300W (Tc)

Product Advantages

Excellent high-voltage and high-power handling capabilities

Low on-state resistance for efficient power conversion

Broad operating temperature range for wide application flexibility

Compact TO-263 (D-Pak) surface mount package

Key Technical Parameters

Drain-Source Voltage (Vdss): 800V

Gate-Source Voltage (Vgs): ±30V

On-State Resistance (Rds(on)): 1.1Ω @ 5A, 10V

Continuous Drain Current (Id): 10A (Tc)

Input Capacitance (Ciss): 2050pF @ 25V

Power Dissipation (Pd): 300W (Tc)

Quality and Safety Features

RoHS3 compliant

Tube packaging

Compatibility

Compatible with a wide range of power electronics and power conversion applications

Application Areas

Power supplies

Motor drives

Inverters

Converters

Industrial and consumer electronics

Product Lifecycle

This product is currently available and is not nearing discontinuation.

Replacement or upgrade options may be available from IXYS Corporation.

Key Reasons to Choose This Product

Excellent high-voltage and high-power handling capabilities

Low on-state resistance for efficient power conversion

Broad operating temperature range for wide application flexibility

Compact surface mount package for space-constrained designs

RoHS3 compliance for environmentally-conscious applications

Availability of replacement and upgrade options from the manufacturer