Manufacturer Part Number
IXFA110N15T2
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
ROHS3 Compliant
TO-263 (D2Pak) Packaging
Surface Mount Mounting
-55°C to 175°C Operating Temperature
150V Drain to Source Voltage
±20V Gate to Source Voltage
13mOhm On-Resistance at 55A, 10V
110A Continuous Drain Current at 25°C
8600pF Input Capacitance at 25V
480W Power Dissipation
N-Channel FET Type
5V Gate Threshold Voltage at 250A
10V Drive Voltage
150nC Gate Charge at 10V
Product Advantages
High power handling capability
Low on-resistance
Wide operating temperature range
Suitable for high-voltage applications
Key Technical Parameters
Drain to Source Voltage
Gate to Source Voltage
On-Resistance
Continuous Drain Current
Input Capacitance
Power Dissipation
FET Type
Gate Threshold Voltage
Drive Voltage
Gate Charge
Quality and Safety Features
ROHS3 Compliant
Compatibility
TO-263 (D2Pak) package
HiPerFET, TrenchT2 series
Application Areas
High power electronics
Motor drives
Power supplies
Inverters
Converters
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
High power handling
Low on-resistance
Wide operating temperature range
Suitable for high-voltage applications
Reliable and robust performance
Compatibility with common electronics applications