Manufacturer Part Number
MJD44H11TM
Manufacturer
Fairchild (onsemi)
Introduction
High performance silicon NPN Bipolar Junction Transistor (BJT)
Product Features and Performance
Optimized for high-speed switching applications
Low saturation voltage for high efficiency
High current handling capability up to 8A
High transition frequency of 85MHz
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent switching performance
Reliable and robust design
Suitable for high power applications
Wide operating temperature range
Key Technical Parameters
Power Rating: 1.75W
Collector-Emitter Breakdown Voltage: 80V
Collector Current (Max): 8A
Collector Cutoff Current: 1A
Collector-Emitter Saturation Voltage: 1V @ 400mA, 8A
DC Current Gain (hFE): 60 @ 2A, 1V
Quality and Safety Features
RoHS3 compliant
Certified for reliable performance
Compatibility
Surface mount package (TO-252-3, DPAK)
Suitable for high-power switching applications
Application Areas
Power supplies
Motor drives
Industrial controls
Lighting ballasts
Automotive electronics
Product Lifecycle
Current production model
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent switching performance and high efficiency
High current handling capability
Wide operating temperature range
Reliable and robust design
RoHS3 compliant for environmental safety