MJD44H11T4G - onsemi

Manufacturer Part Number

MJD44H11T4G

Manufacturer

onsemi

Introduction

High-power NPN silicon transistor for use in switching and amplifier applications

Product Features and Performance

High current handling capability up to 8A

High breakdown voltage up to 80V

Wide operating temperature range of -55°C to 150°C

High frequency transition up to 85MHz

Low saturation voltage of 1V @ 400mA, 8A

Product Advantages

Excellent power handling and efficiency

Reliable high-temperature operation

Suitable for high-speed switching applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 80V

Collector Current (Max): 8A

Collector Cutoff Current (Max): 1A

DC Current Gain (Min): 40 @ 4A, 1V

Transition Frequency: 85MHz

Power Dissipation (Max): 1.75W

Quality and Safety Features

RoHS3 compliant

DPAK package for improved thermal performance and reliability

Compatibility

Surface mount package suitable for automated assembly

Application Areas

Switching power supplies

Motor control

Industrial and consumer electronics

Product Lifecycle

This product is an active and widely used device, with no plans for discontinuation

Replacement or upgrade options are available from onsemi and other manufacturers

Key Reasons to Choose This Product

Exceptional power handling and efficiency

Wide operating temperature range for reliable performance

High-speed switching capability for demanding applications

Surface mount packaging for easy integration

RoHS compliance for environmental responsibility