MJD44H11T4 - onsemi

Manufacturer Part Number

MJD44H11T4

Manufacturer

onsemi

Introduction

High-power NPN bipolar junction transistor (BJT)

Designed for use in high-current, high-voltage switching and amplifying applications

Product Features and Performance

Wide operating temperature range: -55°C to 150°C

High power rating: 20W

High collector-emitter breakdown voltage: 80V

High collector current: 8A

High DC current gain: min. 60 @ 2A, 1V

High transition frequency: 85MHz

Product Advantages

Robust and reliable performance

Efficient heat dissipation due to DPAK package

Suitable for a variety of high-power applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 80V

Current Collector (Ic) (Max): 8A

Current Collector Cutoff (Max): 1A

Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A

DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V

Frequency Transition: 85MHz

Quality and Safety Features

RoHS non-compliant

Compatibility

Compatible with various high-power electronic circuits and applications

Application Areas

High-power switching and amplifying circuits

Industrial and automotive electronics

Power supplies and converters

Motor control systems

Product Lifecycle

This product is an active and readily available part from the manufacturer.

Several Key Reasons to Choose This Product

Robust and reliable performance in high-power, high-voltage applications

Efficient heat dissipation due to DPAK package

Wide operating temperature range and high power rating

High DC current gain and transition frequency for efficient switching and amplifying

Readily available and actively supported by the manufacturer