MJD44H11T4-A - STMicroelectronics

Manufacturer Part Number

MJD44H11T4-A

Manufacturer

STMicroelectronics

Introduction

High-power NPN bipolar junction transistor (BJT) for high-current switching and amplification applications.

Product Features and Performance

High power handling capacity up to 20 watts

High collector-emitter breakdown voltage of 80 volts

High collector current rating of 8 amps continuous, 10 amps peak

Low collector-emitter saturation voltage of 1 volt @ 8 amps

Wide operating temperature range up to 150°C

Product Advantages

Excellent power efficiency and thermal management

Robust design for high-reliability applications

Small DPAK surface-mount package for compact integration

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 80 V

Current Collector (Ic) (Max): 8 A

Current Collector Cutoff (Max): 10 A

Vce Saturation (Max) @ Ib, Ic: 1 V @ 400 mA, 8 A

DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4 A, 1 V

Quality and Safety Features

RoHS3 compliant for environmental responsibility

DPAK package for robust mechanical integrity

Compatibility

Commonly used in a wide range of power electronics and motor control applications

Application Areas

Switching power supplies

Motor drives and controls

Lighting ballasts

Industrial automation and control systems

Product Lifecycle

The MJD44H11T4-A is an active and widely available product from STMicroelectronics.

Replacement or upgraded options may become available over time as technology evolves.

Key Reasons to Choose This Product

High power handling capacity and efficiency

Robust design for reliable long-term operation

Small surface-mount package for compact integration

Wide compatibility across power electronics applications