MJD44H11T4 - STMicroelectronics

Manufacturer Part Number

MJD44H11T4

Manufacturer

STMicroelectronics

Introduction

High-power NPN Bipolar Junction Transistor (BJT) for use in power amplifier and switching applications.

Product Features and Performance

High current handling capability up to 8A

High power dissipation up to 20W

High voltage rating up to 80V

Low collector-emitter saturation voltage (Vce(sat)) of 1V @ 8A

Wide operating temperature range up to 150°C

Product Advantages

Robust and reliable design

Efficient power handling

Suitable for high-current, high-power applications

Compact DPAK surface-mount package

Key Technical Parameters

Power Rating: 20W

Voltage Rating: 80V

Current Rating: Up to 8A

DC Current Gain (hFE): Minimum 40 @ 4A, 1V

Saturation Voltage (Vce(sat)): 1V @ 400mA, 8A

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for use in a wide range of power amplifier and switching circuits

Application Areas

Power amplifiers

Motor drives

Switching power supplies

Industrial controls

Automotive electronics

Product Lifecycle

This product is currently in active production and availability.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

High current and power handling capability

Efficient performance with low saturation voltage

Robust and reliable design for demanding applications

Compact surface-mount DPAK package

RoHS3 compliance for environmental sustainability