MJD44H11G - onsemi

Manufacturer Part Number

MJD44H11G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

High power handling capability

High current capacity

High transition frequency

Low saturation voltage

Product Advantages

Reliable performance

Rugged design

Efficient power conversion

Suitable for high-power applications

Key Technical Parameters

Power Rating: 1.75 W

Collector-Emitter Breakdown Voltage: 80 V

Collector Current (Max): 8 A

Collector Cutoff Current (Max): 1 A

Collector-Emitter Saturation Voltage: 1 V @ 400 mA, 8 A

DC Current Gain (hFE): 40 @ 4 A, 1 V

Transition Frequency: 85 MHz

Quality and Safety Features

ROHS3 Compliant

Suitable for high-temperature operation (-55°C to 150°C)

Compatibility

Surface mount (DPAK) package

Application Areas

Power amplifiers

Motor drives

Switching regulators

Inverters

Industrial control

Product Lifecycle

Current production

Replacements and upgrades available

Key Reasons to Choose

High power handling and current capacity

Fast switching performance

Low saturation voltage for efficient power conversion

Reliable and rugged design

Suitable for a wide range of high-power applications