MJD44H11 - onsemi

Manufacturer Part Number

MJD44H11

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

Power Rating: 20 W

Collector-Emitter Breakdown Voltage: 80 V

Collector Current (Max): 8 A

Collector Cutoff Current (Max): 1 A

Collector-Emitter Saturation Voltage: 1 V @ 400 mA, 8 A

DC Current Gain (hFE): 60 @ 2 A, 1 V

Transition Frequency: 85 MHz

Product Advantages

High power handling capability

High breakdown voltage

Suitable for high current applications

Key Technical Parameters

Transistor Type: NPN

Mounting Type: Surface Mount

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Quality and Safety Features

RoHS non-compliant

Compatibility

Compatible with various electronic circuit designs requiring high power bipolar transistors

Application Areas

Power amplifiers

Switching circuits

Motor control

Industrial electronics

Product Lifecycle

Mature product, no indication of discontinuation

Replacement or upgrade options may be available

Key Reasons to Choose This Product

Excellent power handling and high voltage capabilities

Suitable for high current applications

High frequency performance

Surface mount packaging for ease of integration