MJD42CT4G - onsemi

Manufacturer Part Number

MJD42CT4G

Manufacturer

onsemi

Introduction

The MJD42CT4G is a high-power PNP bipolar junction transistor (BJT) designed for a variety of power switching and amplification applications.

Product Features and Performance

High collector current capability of up to 6A

High collector-emitter breakdown voltage of up to 100V

Low collector-emitter saturation voltage of 1.5V at 6A collector current

Wide operating temperature range of -65°C to 150°C

Transition frequency of 3MHz

Suitable for surface mount applications

Product Advantages

Excellent power handling capability

High voltage and current ratings

Low saturation voltage for improved efficiency

Wide temperature range for diverse applications

Surface mount package for compact designs

Key Technical Parameters

Collector-Emitter Voltage (VCEO): 100V

Collector Current (IC): 6A

Collector-Emitter Saturation Voltage (VCE(sat)): 1.5V @ 6A

DC Current Gain (hFE): 15 @ 3A, 4V

Transition Frequency (fT): 3MHz

Quality and Safety Features

RoHS3 compliant

DPAK package for improved thermal management

Compatibility

Suitable for a wide range of power switching and amplification applications

Application Areas

Power supplies

Motor drives

Industrial controls

Audio amplifiers

Lighting ballasts

Product Lifecycle

This product is currently in production and is not nearing discontinuation.

Replacements and upgrades may be available from onsemi or other manufacturers.

Several Key Reasons to Choose This Product

High power handling capability for demanding applications

Wide voltage and current ratings for design flexibility

Low saturation voltage for improved efficiency

Wide operating temperature range for diverse environments

Surface mount package for compact, space-saving designs

RoHS3 compliance for environmentally-conscious applications