MJD44H11-1G - onsemi

Manufacturer Part Number

MJD44H11-1G

Manufacturer

onsemi

Introduction

The MJD44H11-1G is a high-performance NPN bipolar junction transistor (BJT) from onsemi, designed for a variety of power and switching applications.

Product Features and Performance

Power rating of 1.75 W

Collector-Emitter Breakdown Voltage (VCEO) of 80 V

Collector Current (IC) of up to 8 A

Collector Cutoff Current (ICBO) of up to 1 A

Low Collector-Emitter Saturation Voltage (VCE(sat)) of 1 V at 400 mA, 8 A

High DC Current Gain (hFE) of at least 40 at 4 A, 1 V

Transition Frequency (fT) of 85 MHz

Product Advantages

Excellent power handling and switching capabilities

Robust design for reliable operation

Suitable for a wide range of power electronics and amplifier applications

Key Technical Parameters

Package: TO-251-3 Short Leads, I-PAK, TO-251AA

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

High-quality packaging and manufacturing processes

Compatibility

Suitable for use in a variety of power electronics and amplifier circuits

Application Areas

Power amplifiers

Motor drives

Switching power supplies

Industrial control systems

Product Lifecycle

The MJD44H11-1G is an active product and is not nearing discontinuation.

Replacement or upgrade options may be available from onsemi or other manufacturers.

Several Key Reasons to Choose This Product

High power handling and switching capabilities

Reliable and robust design for demanding applications

Wide operating temperature range

RoHS3 compliance for use in modern electronic systems

Availability of compatible packaging and mounting options