MJD44E3T4G - onsemi

Manufacturer Part Number

MJD44E3T4G

Manufacturer

onsemi

Introduction

High-power, high-voltage NPN Darlington transistor

Product Features and Performance

Optimized for high-current, high-voltage switching and amplifier applications

Capable of handling up to 10A collector current and 80V collector-emitter voltage

High current gain of 1000 for 5A collector current

Low saturation voltage of 2V at 10A collector current

Wide operating temperature range of -55°C to 150°C

Product Advantages

Efficient power handling

Robust and reliable design

Compact DPAK surface mount package

Key Technical Parameters

Power Rating: 1.75W

Collector-Emitter Breakdown Voltage: 80V

Collector Current (Max): 10A

Collector Cutoff Current (Max): 10A

Saturation Voltage: 2V @ 20mA, 10A

DC Current Gain: 1000 @ 5A, 5V

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for a wide range of high-power, high-voltage switching and amplifier applications

Application Areas

Industrial motor control

Power supplies

Lighting

Appliances

Automotive electronics

Product Lifecycle

This product is an active and widely available part, with no plans for discontinuation.

Key Reasons to Choose

Excellent power handling capability

High current gain for efficient operation

Low saturation voltage for minimal power loss

Wide operating temperature range for versatile use

Compact and reliable DPAK package