MJD44H11RLG - onsemi

Manufacturer Part Number

MJD44H11RLG

Manufacturer

onsemi

Introduction

High-power NPN bipolar junction transistor (BJT) for general-purpose amplifier and switch applications.

Product Features and Performance

High current-handling capability up to 8A

High frequency transition up to 85MHz

Low collector-emitter saturation voltage (VCE(sat)) of 1V @ 400mA, 8A

Wide operating temperature range of -55°C to 150°C

Power dissipation of up to 1.75W

Product Advantages

Excellent thermal management due to DPAK package

Robust design for reliable performance in demanding applications

Optimized for high-power, high-current switching and amplification

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 80V

Collector Cutoff Current (ICBO): 1A

DC Current Gain (hFE): 40 min @ 4A, 1V

Transition Frequency (fT): 85MHz

Quality and Safety Features

RoHS3 compliant

Manufactured in an ISO-certified facility

Compatibility

Suitable for a wide range of general-purpose amplifier and switch applications, including power supplies, motor drives, and industrial controls.

Application Areas

Power amplifiers

Switch-mode power supplies

Motor drives

Industrial controls

Lighting ballasts

Product Lifecycle

This product is currently in production and readily available. There are no plans for discontinuation, and replacements or upgrades are not necessary at this time.

Key Reasons to Choose This Product

High-power handling capability up to 8A

Fast switching performance with 85MHz transition frequency

Efficient thermal management in the DPAK package

Robust design for reliable operation in demanding applications

RoHS3 compliance for use in environmentally-friendly applications