MJD45H11G - onsemi

Manufacturer Part Number

MJD45H11G

Manufacturer

onsemi

Introduction

High-power PNP bipolar transistor for high-current switching and amplification applications.

Product Features and Performance

Power rating up to 1.75W

Collector-emitter breakdown voltage of 80V

Collector current up to 8A

Transition frequency of 90MHz

High DC current gain of 40 or more

Product Advantages

Capable of high-current operations

Surface mount package for compact designs

Suitable for high-power switching and amplification

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 80V

Current Collector (Ic) (Max): 8A

Current Collector Cutoff (Max): 1A

Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A

DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V

Frequency Transition: 90MHz

Quality and Safety Features

RoHS3 compliant

Designed for reliable and safe operation

Compatibility

Surface mount DPAK package

Compatible with a variety of high-power circuit designs

Application Areas

High-power switching circuits

Audio amplifiers

Power supplies

Motor control

Product Lifecycle

This product is an active and widely available part from onsemi.

Replacements and upgrades may be available from onsemi or other manufacturers.

Key Reasons to Choose This Product

High power handling capability up to 1.75W

High collector current up to 8A

High DC current gain of 40 or more

Surface mount DPAK package for compact designs

Reliable and safe operation with RoHS3 compliance

Suitable for a wide range of high-power applications