Manufacturer Part Number
MJD45H11T4
Manufacturer
STMicroelectronics
Introduction
High-power PNP bipolar junction transistor (BJT) in a DPAK package for power switching and amplification applications.
Product Features and Performance
High-power handling capability up to 20W
Voltage rating up to 80V
Current rating up to 8A continuous, 10A peak
Low collector-emitter saturation voltage of 1V at 8A
Wide operating temperature range up to 150°C
Surface mount DPAK (TO-252) package
Product Advantages
Robust and reliable operation
Efficient power conversion and amplification
Compact and space-saving surface mount package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 80V
Collector Current (IC): 8A continuous, 10A peak
DC Current Gain (hFE): min. 40 @ 4A, 1V
Collector-Emitter Saturation Voltage (VCE(sat)): 1V @ 400mA, 8A
Quality and Safety Features
RoHS3 compliant
Reliable and durable DPAK (TO-252) package
Compatibility
Suitable for a wide range of power switching and amplification applications
Application Areas
Power supplies
Motor drives
Inverters
Amplifiers
Industrial electronics
Product Lifecycle
Current product, no discontinuation planned
Replacement or upgrades available if needed
Key Reasons to Choose This Product
High-power handling capability
Excellent electrical performance
Compact and reliable surface mount package
Wide operating temperature range
RoHS3 compliance for environmental sustainability