MJD45H11TF - onsemi

Manufacturer Part Number

MJD45H11TF

Manufacturer

onsemi

Introduction

The MJD45H11TF is a high-power bipolar junction transistor (BJT) from onsemi's discrete semiconductor product line. It is designed for a variety of power applications.

Product Features and Performance

Capable of handling up to 1.75W of power

Breakdown voltage of 80V between collector and emitter

Maximum collector current of 8A

Transition frequency of 40MHz

Surface mount packaging for compact design

Product Advantages

High power and current handling capabilities

Compact D-Pak surface mount package

Suitable for a wide range of power applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 80V

Collector Current (Max): 8A

Collector Cutoff Current (Max): 10A

Collector-Emitter Saturation Voltage (Max): 1V @ 400mA, 8A

DC Current Gain (Min): 40 @ 4A, 1V

Operating Temperature (Max): 150°C

Quality and Safety Features

Robust design for reliable operation

Compliance with industry safety standards

Compatibility

Compatible with various power electronic circuits and applications

Application Areas

Switching power supplies

Motor drives

Voltage regulators

Amplifiers

General power electronics

Product Lifecycle

Currently in production

No immediate plans for discontinuation

Replacement or upgrade options available if needed

Key Reasons to Choose This Product

High power handling capability

Compact surface mount packaging

Reliable and robust performance

Suitable for a wide range of power applications

Availability of replacement or upgrade options