MJD45H11RL - onsemi

Manufacturer Part Number

MJD45H11RL

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

Power Rating: 20W

Collector-Emitter Breakdown Voltage: 80V

Collector Current (Max): 8A

Collector Cutoff Current (Max): 1A

Collector-Emitter Saturation Voltage: 1V @ 400mA, 8A

DC Current Gain: 60 @ 2A, 1V

Transition Frequency: 90MHz

Product Advantages

High power handling capability

Capable of high current operation

Surface mount package for compact design

Key Technical Parameters

Transistor Type: PNP

Mounting Type: Surface Mount

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Quality and Safety Features

RoHS non-compliant

Compatibility

Suitable for a variety of electronic circuit applications

Application Areas

Power amplifiers

Switching circuits

Audio amplifiers

Industrial control systems

Product Lifecycle

No information on discontinuation or availability of replacements/upgrades

Several Key Reasons to Choose This Product

High power handling and current capability

Compact surface mount package

Suitable for a wide range of electronic circuit applications