MJD45H11TF - Fairchild Semiconductor

Manufacturer Part Number

MJD45H11TF

Manufacturer

Fairchild (onsemi)

Introduction

High Power PNP Bipolar Junction Transistor

Product Features and Performance

High Power Handling Capability: 1.75 W

High Voltage Rating: 80 V Collector-Emitter Breakdown Voltage

High Current Rating: 8 A Collector Current

Wide Operating Temperature Range: 150°C (TJ)

High Current Gain: Minimum 40 at 4 A, 1 V

High Transition Frequency: 40 MHz

Product Advantages

Efficient Power Handling

Reliable High-Voltage and High-Current Operation

Wide Temperature Tolerance

Strong Current Gain

Key Technical Parameters

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Type: PNP Bipolar Junction Transistor

Collector-Emitter Breakdown Voltage: 80 V

Collector Current: 8 A

Collector Cutoff Current: 10 A

Collector-Emitter Saturation Voltage: 1 V @ 400 mA, 8 A

Current Gain: Minimum 40 @ 4 A, 1 V

Transition Frequency: 40 MHz

Quality and Safety Features

RoHS3 Compliant

Suitable for Surface Mount Applications

Compatibility

Compatible with a wide range of electronic circuits and power supply designs requiring high-power PNP transistors

Application Areas

Power Amplifiers

Motor Drives

Power Supplies

Industrial Controls

Automotive Electronics

Product Lifecycle

Current production, no discontinuation planned

Several Key Reasons to Choose This Product

Excellent power handling capability

High voltage and current ratings for reliable operation

Wide operating temperature range

Strong current gain for efficient power amplification

Surface mount packaging for compact design

RoHS compliance for environmental responsibility