MJD45H11T4G - onsemi

Manufacturer Part Number

MJD45H11T4G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

RoHS3 Compliant

DPAK Package

Wide Operating Temperature Range: -55°C to 150°C

High Power Capability: 1.75W

High Voltage Rating: 80V Collector-Emitter Breakdown Voltage

High Current Capability: 8A Collector Current

High DC Current Gain: 40 minimum at 4A, 1V

Product Advantages

Reliable and robust performance

Compact and space-saving DPAK package

Suitable for a variety of high-power, high-voltage applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 80V

Collector Current (Max): 8A

Collector Cutoff Current (Max): 1A

Saturation Voltage (Max): 1V @ 400mA, 8A

Transistor Type: PNP

DC Current Gain (Min): 40 @ 4A, 1V

Transition Frequency: 90MHz

Quality and Safety Features

RoHS3 Compliant

Suitable for high-temperature and high-power applications

Compatibility

Surface Mount Mounting Type

Tape & Reel Packaging

Application Areas

Power amplifiers

Switch-mode power supplies

Motor controls

Industrial and automotive electronics

Product Lifecycle

Current product, no discontinuation plans

Replacement and upgrade options available

Key Reasons to Choose

Reliable and robust performance

Wide operating temperature range

High power and voltage handling capabilities

High current capability

Compact and space-saving DPAK package

Suitable for a variety of high-power, high-voltage applications