MJD45H11-1G - onsemi

Manufacturer Part Number

MJD45H11-1G

Manufacturer

onsemi

Introduction

The MJD45H11-1G is a high-performance PNP bipolar junction transistor (BJT) from onsemi. It is designed for use in a variety of power electronics applications.

Product Features and Performance

Power rating of 1.75W

Collector-Emitter Breakdown Voltage (VCEO) of 80V

Collector Current (IC) rating of 8A

Gain (hFE) of 40 at 4A, 1V

Frequency Transition (fT) of 90MHz

Wide operating temperature range of -55°C to 150°C

Product Advantages

High power handling capability

Robust and reliable performance

Suitable for a wide range of power electronics applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 80V

Collector Current (IC): 8A

DC Current Gain (hFE): 40 @ 4A, 1V

Frequency Transition (fT): 90MHz

Power Rating: 1.75W

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

ROHS3 compliant

Housed in a reliable TO-251-3 (I-PAK) package

Compatibility

Can be used as a replacement or upgrade for a variety of power transistor applications

Application Areas

Power supplies

Motor drives

Switching regulators

Amplifiers

Industrial electronics

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacements and upgrades may be available in the future as technology evolves.

Key Reasons to Choose This Product

High power handling capability

Robust and reliable performance

Suitable for a wide range of power electronics applications

Compatibility with various power transistor applications

Backed by onsemi's quality and reliability