MJD45H11TM - Fairchild Semiconductor

Manufacturer Part Number

MJD45H11TM

Manufacturer

Fairchild (onsemi)

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

RoHS3 Compliant

TO-252-3 Package (DPak, SC-63)

Operating Temperature: 150°C (TJ)

Power Rating: 1.75 W

Collector-Emitter Breakdown Voltage: 80 V (Max)

Collector Current: 8 A (Max), 10 A (Collector Cutoff, Max)

Collector-Emitter Saturation Voltage: 1 V @ 400 mA, 8 A

DC Current Gain (hFE): 40 (Min) @ 4 A, 1 V

Transition Frequency: 40 MHz

Product Advantages

High power handling capability

Robust design for reliable performance

Suitable for various power applications

Key Technical Parameters

Transistor Type: PNP

Mounting Type: Surface Mount

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with various power electronic circuits and applications

Application Areas

Power supplies

Motor drives

Switching circuits

Amplifiers

Product Lifecycle

Current product, no indication of discontinuation

Replacement or upgrade options may be available from the manufacturer

Several Key Reasons to Choose This Product

High power rating and voltage handling capability

Reliable performance in high-temperature environments

Suitable for a wide range of power electronic applications

RoHS3 compliance for environmental sustainability