FCD9N60NTM - Fairchild Semiconductor

Manufacturer Part Number

FCD9N60NTM

Manufacturer

Fairchild (onsemi)

Introduction

High-performance N-channel MOSFET transistor suitable for a wide range of power conversion and control applications.

Product Features and Performance

600V Drain-Source Voltage (Vdss)

9A Continuous Drain Current (Id)

385mΩ Maximum On-State Resistance (Rds(on))

1000pF Maximum Input Capacitance (Ciss)

6W Power Dissipation (Tc)

Operation Temperature Range: -55°C to 150°C

Product Advantages

Excellent performance-to-cost ratio

High reliability and ruggedness

Optimized for efficient power conversion

Suitable for a wide range of power applications

Key Technical Parameters

Drain-Source Voltage (Vdss): 600V

Gate-Source Voltage (Vgs): ±30V

On-State Resistance (Rds(on)): 385mΩ @ 4.5A, 10V

Continuous Drain Current (Id): 9A (Tc)

Input Capacitance (Ciss): 1000pF @ 100V

Power Dissipation (Tc): 92.6W

Quality and Safety Features

Robust and reliable design

Complies with relevant safety standards

RoHS-compliant

Compatibility

Suitable for a wide range of power conversion and control applications

Application Areas

Switched-mode power supplies

Motor drives

Inverters

Industrial and consumer electronics

Product Lifecycle

Current product

Replacements and upgrades may be available

Several Key Reasons to Choose This Product

High-performance and cost-effective solution

Efficient power conversion capabilities

Wide operating temperature range

Reliable and rugged design

Suitable for a variety of power applications