Manufacturer Part Number
FCD900N60Z
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel SuperFET II MOSFET with low on-resistance and high avalanche capability.
Product Features and Performance
600V drain-to-source voltage
900mΩ maximum on-resistance at 2.3A, 10V
5A continuous drain current at 25°C
52W maximum power dissipation
-55°C to 150°C operating temperature range
Product Advantages
Excellent power efficiency
High avalanche capability
Robust and reliable performance
Key Technical Parameters
Drain-to-source voltage (Vdss): 600V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 900mΩ @ 2.3A, 10V
Continuous drain current (Id): 4.5A @ 25°C
Input capacitance (Ciss): 720pF @ 25V
Gate charge (Qg): 17nC @ 10V
Quality and Safety Features
MOSFET technology for enhanced reliability and safety
Robust package design (TO-252, D-Pak) for high power and thermal performance
Compatibility
Compatible with a wide range of power electronic applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product in the Fairchild (onsemi) portfolio
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency and low on-resistance for improved system performance
High avalanche capability for reliable operation under adverse conditions
Robust and reliable package design for demanding applications
Compatibility with a wide range of power electronic systems
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