Manufacturer Part Number
FCD600N65S3R0
Manufacturer
onsemi
Introduction
High-performance N-Channel SuperFET III MOSFET for high-voltage, high-power applications
Product Features and Performance
650V drain-to-source voltage rating
600mOhm maximum on-resistance at 3A, 10V
6A continuous drain current at 25°C case temperature
465pF maximum input capacitance at 400V
54W maximum power dissipation at 25°C case temperature
Operates in the temperature range of -55°C to 150°C
Product Advantages
Excellent efficiency and power density
Low on-resistance for reduced conduction losses
High-voltage capability for use in high-power applications
Stable performance across wide temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 600mOhm @ 3A, 10V
Continuous Drain Current (Id): 6A @ 25°C
Input Capacitance (Ciss): 465pF @ 400V
Power Dissipation (Pd): 54W @ 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for use in a wide range of high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and medical equipment
Product Lifecycle
Current production
Availability of replacements and upgrades
Several Key Reasons to Choose This Product
High voltage and current capability for demanding applications
Excellent efficiency and power density
Low on-resistance for reduced conduction losses
Stable performance across wide temperature range
Designed and manufactured to high quality standards
Suitable for a wide range of high-voltage, high-power applications
