Manufacturer Part Number
FCD7N60TM
Manufacturer
onsemi
Introduction
The FCD7N60TM is a high-performance N-channel MOSFET transistor in the SuperFET series, designed for power switching applications.
Product Features and Performance
600V drain-to-source voltage rating
Low on-resistance of 600 mΩ at 3.5A, 10V
Wide operating temperature range of -55°C to 150°C
High continuous drain current of 7A at 25°C
Low input capacitance of 920 pF at 25V
Maximum power dissipation of 83W at Tc
Product Advantages
Efficient power switching performance
Excellent thermal management
Reliable operation in harsh environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 600 mΩ @ 3.5A, 10V
Continuous Drain Current (Id): 7A @ 25°C
Input Capacitance (Ciss): 920 pF @ 25V
Power Dissipation (Pd): 83W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for high-voltage, high-power applications
Compatibility
TO-252-3 (D-Pak) package
Surface mount design
Application Areas
Switching power supplies
Motor drives
Industrial automation
Renewable energy systems
Product Lifecycle
Currently available
No discontinuation plans
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable performance in high-temperature environments
Compact surface mount package for easy integration
Proven technology from a trusted manufacturer
FCD7N60TM-WSONsemi