Manufacturer Part Number
FCD850N80Z
Manufacturer
onsemi
Introduction
The FCD850N80Z is a high-performance N-channel MOSFET transistor from onsemi's SuperFET II series, designed for a wide range of power electronics applications.
Product Features and Performance
800V drain-to-source voltage (Vdss)
850mΩ maximum on-resistance (Rds(on)) at 3A, 10V
6A continuous drain current (Id) at 25°C
1315pF maximum input capacitance (Ciss) at 100V
75W maximum power dissipation (Tc)
-55°C to 150°C operating temperature range
Product Advantages
High voltage and low on-resistance for efficient power conversion
Compact TO-252-3 (D-Pak) surface-mount package
Suitable for high-frequency and high-temperature applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs): ±20V
Drain Current (Id): 6A
On-Resistance (Rds(on)): 850mΩ
Input Capacitance (Ciss): 1315pF
Power Dissipation (Tc): 75W
Quality and Safety Features
RoHS3 compliant
Suitable for critical applications with high reliability requirements
Compatibility
Designed for a wide range of power electronics applications, including power supplies, motor drives, and inverters.
Application Areas
Power supplies
Motor drives
Inverters
Industrial controls
Appliances
Product Lifecycle
This product is currently in production and is not near discontinuation.
Replacement or upgrade options may be available from onsemi's latest SuperFET series.
Key Reasons to Choose This Product
High voltage and low on-resistance for efficient power conversion
Compact surface-mount package for space-constrained designs
Suitable for high-frequency and high-temperature applications
Reliable performance with RoHS3 compliance
Compatibility with a wide range of power electronics applications