FCD5N60TM - onsemi

Manufacturer Part Number

FCD5N60TM

Manufacturer

onsemi

Introduction

High-voltage, high-performance N-channel MOSFET in a compact surface-mount package.

Product Features and Performance

600V drain-to-source voltage rating

Low on-resistance of 950mΩ at 2.3A, 10V

High continuous drain current of 4.6A at 25°C

Low gate charge of 16nC at 10V

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent power handling capability

Low switching losses

Compact surface-mount package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Gate-to-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 950mΩ @ 2.3A, 10V

Continuous Drain Current (Id): 4.6A @ 25°C

Input Capacitance (Ciss): 600pF @ 25V

Power Dissipation (Pd): 54W @ Tc

Quality and Safety Features

RoHS3 compliant

TO-252AA package for enhanced thermal performance

Compatibility

Compatible with various power supply and motor control applications

Application Areas

Switching power supplies

Motor drives

Industrial and consumer electronics

Product Lifecycle

Currently in active production

Replacement and upgrade options available

Key Reasons to Choose This Product

Excellent power handling and efficiency

Compact surface-mount package

Wide operating temperature range

RoHS3 compliance for environmental responsibility