Manufacturer Part Number
FCD600N60Z
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, N-channel MOSFET transistor
Product Features and Performance
Capable of operating at high voltages up to 600V
Designed for efficient power switching applications
Low on-resistance for low conduction losses
Fast switching speed and low gate charge
Product Advantages
Robust and reliable performance
Optimized for high-efficiency power conversion
Suitable for a wide range of power electronic applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 600mΩ @ 3.7A, 10V
Continuous Drain Current (Id): 7.4A @ 25°C (Tc)
Input Capacitance (Ciss): 1120pF @ 25V
Power Dissipation (Tc): 89W
Quality and Safety Features
Designed to meet high-reliability requirements
Suitable for use in harsh environments
Complies with RoHS directive (RoHS non-compliant)
Compatibility
Standard TO-252 (D-Pak) package
Compatible with a wide range of power electronic systems
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Renewable energy systems
Product Lifecycle
This product is currently in production
Replacements or upgrades may be available in the future
Key Reasons to Choose this Product
Excellent performance in high-voltage, high-power applications
Optimized for efficiency and reliability
Wide operating temperature range (-55°C to 150°C)
Proven technology and reliable manufacturing
FCD600N65S3ROAMI Semiconductor/onsemi