Manufacturer Part Number
FCD600N60Z
Manufacturer
onsemi
Introduction
High-performance N-Channel SuperFET II MOSFET with extended voltage rating and low on-resistance.
Product Features and Performance
Drain-to-source voltage (Vdss) of 600V
Low on-resistance (Rds(on)) of 600mΩ @ 3.7A, 10V
Continuous drain current (Id) of 7.4A at 25°C
Power dissipation (Pd) of 89W at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge for high-efficiency power conversion
Product Advantages
Excellent power handling capability
Reduced conduction losses for improved efficiency
Compact TO-252 (D-Pak) surface-mount package
Suitable for high-voltage, high-power applications
Key Technical Parameters
Vdss: 600V
Vgs(max): ±20V
Rds(on)(max): 600mΩ @ 3.7A, 10V
Id(max): 7.4A @ 25°C
Pd(max): 89W @ 25°C
Qg(max): 26nC @ 10V
Operating temperature range: -55°C to 150°C
Quality and Safety Features
ROHS3 compliant
Manufactured in ISO-certified facilities
Compatibility
Suitable for use in high-voltage, high-power electronic circuits and power conversion applications
Application Areas
Switched-mode power supplies (SMPS)
Inverters
Motor drives
Industrial and consumer electronics
Product Lifecycle
This product is a current and actively supported part of onsemi's portfolio.
Replacement or upgrade options may be available, depending on application requirements.
Key Reasons to Choose This Product
High voltage rating of 600V for demanding applications
Low on-resistance for improved efficiency and reduced power losses
Compact surface-mount package for space-constrained designs
Wide operating temperature range for reliable performance in diverse environments
Proven SuperFET II technology for superior switching characteristics and reliability