FCD4N60TM - onsemi

Manufacturer Part Number

FCD4N60TM

Manufacturer

onsemi

Introduction

The FCD4N60TM is a N-channel, enhancement-mode MOSFET transistor in a TO-252AA package, designed for high-voltage, high-current switching applications.

Product Features and Performance

High drain-to-source voltage of 600V

Low on-resistance of 1.2Ω at 2A, 10V

Continuous drain current of 3.9A at 25°C

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 540pF at 25V

Maximum power dissipation of 50W at Tc

Product Advantages

Excellent switching performance for high-voltage, high-current applications

Compact TO-252AA package for space-efficient design

Reliable and durable construction for long-lasting operation

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Gate-to-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 1.2Ω at 2A, 10V

Continuous Drain Current (Id): 3.9A at 25°C

Input Capacitance (Ciss): 540pF at 25V

Power Dissipation (Pd): 50W at Tc

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Rated for a wide operating temperature range of -55°C to 150°C

Compatibility

Compatible with a variety of high-voltage, high-current switching applications

Application Areas

Switching power supplies

Motor drives

Inverters

Uninterruptible power supplies (UPS)

Industrial and consumer electronics

Product Lifecycle

The FCD4N60TM is an active product and not nearing discontinuation.

Replacement or upgrade options may be available from onsemi.

Key Reasons to Choose This Product

Excellent performance in high-voltage, high-current switching applications

Compact and reliable TO-252AA package

Wide operating temperature range and high power dissipation

RoHS3 compliance for environmental responsibility

Proven reliability and long-lasting operation