Manufacturer Part Number
FCD380N60E
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET with low on-resistance and fast switching characteristics, suitable for a wide range of power conversion and control applications.
Product Features and Performance
High power density and efficient power conversion
Low on-resistance and fast switching for improved efficiency
Wide operating temperature range of -55°C to 150°C
High drain-source voltage rating of 600V
Low gate-source voltage (±20V)
High continuous drain current of 10.2A at 25°C
Product Advantages
Excellent power density and efficiency
Reliable and robust performance
Versatile for various power applications
Easy to integrate and implement
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 380mΩ @ 5A, 10V
Continuous Drain Current (Id): 10.2A @ 25°C
Input Capacitance (Ciss): 1770pF @ 25V
Power Dissipation (Pd): 106W @ Tc
Quality and Safety Features
RoHS3 compliant
Reliable and robust design for high-stress applications
Rigorous quality control and testing
Compatibility
Compatible with a wide range of power conversion and control applications
Suitable for various power supply, motor control, and industrial automation systems
Application Areas
Switch-mode power supplies
Motor drives
Industrial automation and control
Inverters and converters
General power conversion and control applications
Product Lifecycle
Current production part
Replacement and upgrade options available from the manufacturer
Key Reasons to Choose This Product
High efficiency and power density for improved system performance
Reliable and rugged design for demanding applications
Versatile compatibility and ease of integration
Competitive pricing and availability from a trusted manufacturer
Ongoing technical support and product lifecycle management
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