FCD260N65S3 - onsemi

Manufacturer Part Number

FCD260N65S3

Manufacturer

onsemi

Introduction

The FCD260N65S3 is a high-performance N-channel MOSFET transistor designed for various power electronics applications.

Product Features and Performance

650V drain-to-source voltage rating

260mΩ maximum on-resistance at 6A, 10V

12A continuous drain current at 25°C

1010pF maximum input capacitance at 400V

90W maximum power dissipation at Tc (case temperature)

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent power handling capability

Low on-resistance for improved efficiency

Compact surface-mount package

Reliable performance in high-voltage applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 650V

Gate-to-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 260mΩ @ 6A, 10V

Continuous Drain Current (Id): 12A @ 25°C

Input Capacitance (Ciss): 1010pF @ 400V

Power Dissipation (Pd): 90W @ Tc

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for a wide range of power electronics applications

Can be used as a replacement or upgrade for similar MOSFET devices

Application Areas

Switching power supplies

Motor drives

Inverters

Lighting ballasts

Industrial controls

Product Lifecycle

The FCD260N65S3 is an active product and not nearing discontinuation

Replacement and upgrade options may be available from onsemi

Key Reasons to Choose This Product

Excellent power handling and efficiency

Reliable performance in high-voltage environments

Compact surface-mount package for space-constrained designs

Backed by onsemi's reputation for quality and innovation