Manufacturer Part Number
FCD3400N80Z
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, N-channel MOSFET transistor
Product Features and Performance
High voltage rating of 800V
Low on-resistance of 3.4Ω at 1A and 10V
Wide operating temperature range of -55°C to 150°C
High current capability of 2A continuous drain current at 25°C
Low gate charge of 9.6nC at 10V
Product Advantages
Excellent power efficiency due to low on-resistance
Reliable operation in high-voltage applications
Wide temperature range allows use in diverse environments
High current handling capability
Key Technical Parameters
Drain to Source Voltage (Vdss): 800V
Gate to Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.4Ω @ 1A, 10V
Drain Current (Id): 2A continuous at 25°C
Input Capacitance (Ciss): 400pF @ 100V
Power Dissipation (Tc): 32W
Quality and Safety Features
Robust TO-252 (D-Pak) surface mount package
Designed for high reliability and safety in high-voltage applications
Compatibility
Compatible with a wide range of high-voltage electronic circuits and systems
Application Areas
Switch-mode power supplies
Motor drives
Inverters
High-voltage power electronics
Product Lifecycle
Current production product
Replacement and upgrade options available from the manufacturer
Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable high-voltage operation
Wide temperature range for diverse applications
High current capability for demanding power requirements
Robust packaging and safety features
FCD5N60Fairchild (onsemi)
FCD4A14CCSTMicroelectronics
FCD5N60-F085onsemiFCD5N60_F085 - N-CHANNEL SUPERFE