Manufacturer Part Number
FCD360N65S3R0
Manufacturer
onsemi
Introduction
High-voltage, high-performance N-channel MOSFET transistor
Product Features and Performance
Supports high drain-source voltage up to 650V
Low on-resistance of 360 mΩ at 5A, 10V
Wide operating temperature range of -55°C to 150°C
Low gate charge of 18 nC at 10V
Fast switching speed
Product Advantages
Excellent power efficiency
Reliable high-voltage operation
Suitable for high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 360 mΩ @ 5A, 10V
Continuous Drain Current (Id): 10A @ 25°C
Input Capacitance (Ciss): 730 pF @ 400V
Power Dissipation (Pd): 83W @ Tc
Quality and Safety Features
RoHS3 compliant
D-PAK (TO-252) surface mount package
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switching power supplies, motor drives, industrial controls, and other high-power electronic systems
Product Lifecycle
Current product, no indication of discontinuation
Several Key Reasons to Choose This Product
Excellent power efficiency and reliability for high-voltage applications
Wide operating temperature range and fast switching speed
Compact D-PAK surface mount package for easy integration
RoHS3 compliance for environmentally-friendly applications
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