Manufacturer Part Number
FCD900N60Z
Manufacturer
onsemi
Introduction
High-performance N-Channel MOSFET transistor for power management and switching applications
Product Features and Performance
600V drain-source voltage rating
900mΩ on-resistance at 2.3A, 10V
5A continuous drain current at 25°C
Low input capacitance of 720pF at 25V
52W power dissipation
Product Advantages
Excellent power efficiency due to low on-resistance
High reliability and ruggedness
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-source voltage (Vdss): 600V
Gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 900mΩ @ 2.3A, 10V
Continuous drain current (Id): 4.5A @ 25°C
Input capacitance (Ciss): 720pF @ 25V
Power dissipation (Pd): 52W
Quality and Safety Features
RoHS3 compliant
TO-252AA package for efficient heat dissipation
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Inverters
Welding equipment
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent power efficiency and performance
High reliability and ruggedness
Suitable for high-voltage, high-power applications
RoHS3 compliance for environmental safety
Compact and efficient TO-252AA package