FCD9N60NTM - onsemi

Manufacturer Part Number

FCD9N60NTM

Manufacturer

onsemi

Introduction

High-performance N-channel MOSFET with low on-resistance and fast switching

Product Features and Performance

600V drain-source voltage rating

Low on-resistance of 385mΩ

9A continuous drain current at 25°C

1000pF input capacitance

6W power dissipation

Product Advantages

Excellent energy efficiency

Fast switching capability

High power density

Reliable performance

Key Technical Parameters

Vdss: 600V

Vgs(max): ±30V

Rds(on): 385mΩ @ 4.5A, 10V

Id(max): 9A @ 25°C

Ciss: 1000pF @ 100V

Pd(max): 92.6W

Quality and Safety Features

ROHS3 compliant

Suitable for high-temperature operation (-55°C to 150°C)

Compatibility

TO-252-3 (D-Pak) package

Compatible with standard MOSFET drivers and control circuits

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Welding equipment

Industrial and consumer electronics

Product Lifecycle

Current product, no indication of discontinuation

Replacements and upgrades available from onsemi

Key Reasons to Choose This Product

Excellent power efficiency and performance

Fast switching for high-frequency applications

Reliable operation in harsh environments

Compatible with standard MOSFET circuitry

Extensive application support from onsemi