NST45010MW6T1G - onsemi

Manufacturer Part Number

NST45010MW6T1G

Manufacturer

onsemi

Introduction

Dual PNP matched bipolar transistor array in a small package for general-purpose applications

Product Features and Performance

Dual PNP matched bipolar transistor array

High transition frequency of 100MHz

Collector-emitter breakdown voltage of 45V

Collector current up to 100mA

Power dissipation of 380mW

Operating temperature range of -55°C to 150°C

Product Advantages

Miniature package size for space-constrained designs

Matched pair for improved performance consistency

High transition frequency for high-speed applications

Wide operating temperature range

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 45V

Current Collector (Ic) (Max): 100mA

Current Collector Cutoff (Max): 15nA (ICBO)

Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V

Frequency Transition: 100MHz

Quality and Safety Features

RoHS3 compliant

Proven reliability and quality from onsemi

Compatibility

Surface mount package: SC-88/SC70-6/SOT-363

Suitable for automated assembly

Application Areas

General-purpose amplifier and switching applications

Portable electronics

Industrial control and instrumentation

Telecommunications equipment

Product Lifecycle

Currently available product

No discontinuation or end-of-life plans announced

Key Reasons to Choose This Product

Miniature package size for space-constrained designs

Matched pair for improved performance consistency

High transition frequency for high-speed applications

Wide operating temperature range

Proven reliability and quality from onsemi