NST3906DXV6T1G - onsemi

Manufacturer Part Number

NST3906DXV6T1G

Manufacturer

onsemi

Introduction

Dual PNP bipolar junction transistor (BJT) array

Product Features and Performance

Operates at up to 500mW power

Collector-emitter breakdown voltage up to 40V

Collector current up to 200mA

Low collector-emitter saturation voltage of 400mV @ 5mA, 50mA

High DC current gain of 100 @ 10mA, 1V

High transition frequency of 250MHz

Product Advantages

Small surface mount package (SOT-563, SOT-666)

Suitable for high-density circuit designs

Excellent thermal characteristics

Key Technical Parameters

Operating temperature range: -55°C to 150°C

RoHS3 compliant

Quality and Safety Features

Manufactured in accordance with industry quality and safety standards

Compatibility

Suitable for a variety of electronic circuit applications

Application Areas

Audio amplifiers

Switching circuits

Biasing networks

General-purpose amplification

Product Lifecycle

Currently available, no plans for discontinuation

Several Key Reasons to Choose This Product

Compact and space-saving package

Excellent electrical performance characteristics

Suitable for a wide range of circuit applications

Reliable and robust design

Compliance with industry quality and safety standards