NST3906F3T5G - onsemi

Manufacturer Part Number

NST3906F3T5G

Manufacturer

onsemi

Introduction

The NST3906F3T5G is a PNP bipolar junction transistor (BJT) designed for a wide range of general-purpose amplifier and switching applications.

Product Features and Performance

High current capability of up to 200 mA

High frequency operation up to 250 MHz

Low collector-emitter saturation voltage of 400 mV @ 5 mA, 50 mA

Wide operating temperature range of -55°C to 150°C

Product Advantages

Compact surface mount SOT-1123 package

RoHS compliance for environmentally friendly use

Tape and reel packaging for automated assembly

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 40 V

Collector Current (Max): 200 mA

Power Dissipation (Max): 290 mW

DC Current Gain (hFE): 100 min @ 10 mA, 1 V

Quality and Safety Features

Compliant with RoHS3 environmental directives

Reliable performance in a wide range of operating temperatures

Compatibility

Suitable for a variety of general-purpose amplifier and switching applications

Application Areas

Audio amplifiers

Switching circuits

General-purpose amplifier designs

Product Lifecycle

Currently in active production

Replacement or upgraded parts may be available in the future

Key Reasons to Choose this Product

High current and frequency capabilities

Low saturation voltage for efficient operation

Compact surface mount package for space-constrained designs

RoHS compliance for environmentally friendly use

Reliable performance across a wide temperature range