NST3904DXV6T1G - onsemi

Manufacturer Part Number

NST3904DXV6T1G

Manufacturer

onsemi

Introduction

Dual NPN bipolar junction transistor (BJT) array

Product Features and Performance

Optimized for common emitter applications

Low collector-emitter saturation voltage

300 MHz transition frequency

High DC current gain of 100 minimum

Operates over a wide temperature range of -55°C to 150°C

Product Advantages

Compact surface mount package

Excellent electrical characteristics

Reliable performance

Key Technical Parameters

Power rating: 500 mW

Collector-emitter breakdown voltage: 40 V

Collector current: 200 mA

Collector-emitter saturation voltage: 300 mV @ 5 mA, 50 mA

DC current gain: 100 minimum @ 10 mA, 1 V

Transition frequency: 300 MHz

Quality and Safety Features

RoHS3 compliant

Compatibility

SOT-563, SOT-666 package types

Application Areas

General purpose amplification and switching

Portable electronics

Telecommunications equipment

Industrial control systems

Product Lifecycle

Current production

Replacement and upgrade options available

Key Reasons to Choose This Product

Compact surface mount package

Excellent electrical characteristics, including high current gain and transition frequency

Wide operating temperature range

Reliable performance and RoHS3 compliance

Suitable for a variety of general-purpose amplification and switching applications