Manufacturer Part Number
NST3906DP6T5G
Manufacturer
onsemi
Introduction
The NST3906DP6T5G is a dual PNP bipolar junction transistor (BJT) array.
Product Features and Performance
Operates in a temperature range of -55°C to 150°C
Power dissipation of 350mW
Collector-emitter breakdown voltage of 40V
Maximum collector current of 200mA
Saturation voltage (Vce Sat) of 400mV at 5mA/50mA
Current gain (hFE) of 100 at 10mA/1V
Transition frequency of 250MHz
Product Advantages
Small size and surface mount package
High performance transistors in a compact array
Suitable for various electronic circuit applications
Key Technical Parameters
Package: SOT-963
Mounting Type: Surface Mount
RoHS Compliance: RoHS3 Compliant
Quality and Safety Features
Compliant with RoHS3 requirements
Compatibility
Suitable for various electronic circuit applications
Application Areas
Ideal for use in audio amplifiers, switches, logic gates, and other electronic circuits
Product Lifecycle
This product is currently in production and readily available.
Key Reasons to Choose This Product
High-performance dual PNP transistors in a compact package
Wide operating temperature range of -55°C to 150°C
Suitable for various electronic circuit applications
RoHS3 compliant for environmental safety