NST3906DP6T5G - onsemi

Manufacturer Part Number

NST3906DP6T5G

Manufacturer

onsemi

Introduction

The NST3906DP6T5G is a dual PNP bipolar junction transistor (BJT) array.

Product Features and Performance

Operates in a temperature range of -55°C to 150°C

Power dissipation of 350mW

Collector-emitter breakdown voltage of 40V

Maximum collector current of 200mA

Saturation voltage (Vce Sat) of 400mV at 5mA/50mA

Current gain (hFE) of 100 at 10mA/1V

Transition frequency of 250MHz

Product Advantages

Small size and surface mount package

High performance transistors in a compact array

Suitable for various electronic circuit applications

Key Technical Parameters

Package: SOT-963

Mounting Type: Surface Mount

RoHS Compliance: RoHS3 Compliant

Quality and Safety Features

Compliant with RoHS3 requirements

Compatibility

Suitable for various electronic circuit applications

Application Areas

Ideal for use in audio amplifiers, switches, logic gates, and other electronic circuits

Product Lifecycle

This product is currently in production and readily available.

Key Reasons to Choose This Product

High-performance dual PNP transistors in a compact package

Wide operating temperature range of -55°C to 150°C

Suitable for various electronic circuit applications

RoHS3 compliant for environmental safety