Manufacturer Part Number
NST3904DP6T5G
Manufacturer
onsemi
Introduction
Dual NPN Bipolar Junction Transistor (BJT) array in a small SOT-963 package.
Product Features and Performance
Dual NPN transistor configuration
High transition frequency of 200MHz
Low collector-emitter saturation voltage of 300mV @ 5mA, 50mA
Wide operating temperature range of -55°C to 150°C
Product Advantages
Small footprint SOT-963 package
Excellent high-frequency performance
Low power dissipation of 350mW
RoHS3 compliant
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 40V
Collector Current (Max): 200mA
DC Current Gain (hFE) (Min): 100 @ 10mA, 1V
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with standard surface mount assembly processes
Application Areas
Amplifier circuits
Switching circuits
Logic gates
General-purpose transistor applications
Product Lifecycle
Active product
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High-performance dual transistor in a compact package
Excellent high-frequency operation up to 200MHz
Low power dissipation and wide temperature range
Reliable and RoHS3 compliant design
NST235-DSTRNOVOSENSE
NST3904F3T5GonsemiTRANS NPN 40V 0.2A SOT1123
NST3946DP6T5GonsemiTRANS NPN/PNP 40V 0.2A SOT963