NST30010MXV6T1G - onsemi

Manufacturer Part Number

NST30010MXV6T1G

Manufacturer

onsemi

Introduction

The NST30010MXV6T1G is a dual PNP bipolar junction transistor (BJT) array product from onsemi, suitable for a wide range of applications.

Product Features and Performance

Dual PNP matched transistor pair

High current gain of 420 (min) at 2 mA, 5 V

High transition frequency of 100 MHz

500 mW power dissipation

30 V collector-emitter breakdown voltage

100 mA collector current (max)

Low collector cutoff current of 15 nA (max)

600 mV collector-emitter saturation voltage (max) at 5 mA, 100 mA

Product Advantages

Compact SOT-563 surface mount package

Excellent matching and tracking of electrical characteristics between the two transistors

Suitable for a variety of analog and digital circuit applications

Robust thermal and electrical performance

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 30V

Current Collector (Ic) (Max): 100mA

Current Collector Cutoff (Max): 15nA (ICBO)

Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V

Frequency Transition: 100MHz

Quality and Safety Features

RoHS3 compliant

Suitable for use in high-reliability applications

Compatibility

Fits standard SOT-563 surface mount footprint

Compatible with common PCB assembly processes

Application Areas

Analog and digital circuit design

Amplifier and switch applications

Portable electronics

Industrial controls

Telecommunications equipment

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacement or upgraded parts may become available in the future as technology advances

Several Key Reasons to Choose This Product

Excellent electrical characteristics, including high current gain, high transition frequency, and low saturation voltage, making it suitable for a wide range of analog and digital circuit applications.

Compact SOT-563 surface mount package, enabling efficient board layout and space-constrained designs.

Robust thermal and electrical performance, ensuring reliable operation in demanding environments.

Availability of a matched transistor pair, simplifying circuit design and improving performance consistency.

RoHS3 compliance, allowing use in environmentally conscious applications.