Manufacturer Part Number
NST45011MW6T1G
Manufacturer
onsemi
Introduction
Dual NPN bipolar junction transistor (BJT) array
Designed for general-purpose amplifier and switching applications
Product Features and Performance
High current gain (hFE) of 200 minimum at 2mA, 5V
High transition frequency of 100MHz
Low collector-emitter saturation voltage of 600mV at 5mA, 100mA
Wide operating temperature range of -55°C to 150°C
Low collector cutoff current of 15nA maximum
Product Advantages
Matched pair for improved performance and consistency
Compact surface-mount package for space-saving designs
Suitable for a variety of general-purpose amplifier and switching applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 45V
Collector Current (IC): 100mA
Power Dissipation: 380mW
Quality and Safety Features
RoHS3 compliant
Meets environmental and safety standards
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
General-purpose amplifier and switching applications
Consumer electronics
Industrial control systems
Automotive electronics
Product Lifecycle
Currently available
No discontinuation or replacement plans announced
Several Key Reasons to Choose This Product
Excellent performance characteristics, including high current gain and transition frequency
Compact and space-saving surface-mount package
Proven reliability and quality from a trusted manufacturer
Versatile application potential in a variety of electronic systems