NST847BDP6T5G - onsemi

Manufacturer Part Number

NST847BDP6T5G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Array

Product Features and Performance

2 NPN transistors in a single package

High current gain (hFE min 200 @ 2mA, 5V)

High transition frequency (100MHz)

Low collector-emitter saturation voltage (Vce(sat) max 600mV @ 5mA, 100mA)

Wide operating temperature range (-55°C to 150°C)

Low collector-base leakage current (ICBO max 15nA)

Surface mount package (SOT-963)

Product Advantages

Compact dual transistor design

Efficient power handling (350mW max power)

Robust electrical characteristics

Suitable for high-frequency applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 45V

Collector Current (IC): 100mA

Power Dissipation: 350mW

Quality and Safety Features

RoHS3 compliant

Reliable surface mount package (SOT-963)

Compatibility

Suitable for a wide range of electronic circuit designs requiring dual NPN transistors

Application Areas

Amplifiers

Switches

Logic gates

Oscillators

Drivers

Product Lifecycle

Current production model

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Compact and efficient dual transistor design

High-performance electrical characteristics

Wide operating temperature range

Reliable surface mount package

RoHS3 compliance for environmental sustainability