NST847BF3T5G - onsemi

Manufacturer Part Number

NST847BF3T5G

Manufacturer

onsemi

Introduction

The NST847BF3T5G is a high-performance NPN bipolar junction transistor (BJT) suitable for a variety of general-purpose amplifier and switching applications.

Product Features and Performance

High DC current gain (hFE) of 200 minimum at 2 mA, 5 V

Transition frequency (fT) of 100 MHz

Low collector-emitter saturation voltage (VCE(sat)) of 600 mV at 5 mA, 100 mA

Collector-emitter breakdown voltage (BVCEO) of 45 V

Power dissipation of 290 mW

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent high-frequency performance

Low noise and distortion

Reliable and robust design

Suitable for a wide range of applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (BVCEO): 45 V

Collector Current (IC(max)): 100 mA

Collector Cutoff Current (ICBO): 15 nA

DC Current Gain (hFE): 200 minimum at 2 mA, 5 V

Transition Frequency (fT): 100 MHz

Power Dissipation: 290 mW

Quality and Safety Features

RoHS3 compliant

Reliable and stable performance

Designed and manufactured to high quality standards

Compatibility

Surface mount (SOT-1123) package

Suitable for a wide range of electronic circuit designs

Application Areas

General-purpose amplifiers

Switching circuits

Instrumentation and control systems

Telecommunications equipment

Product Lifecycle

Currently in active production

No known plans for discontinuation

Replacements or upgrades may be available in the future

Key Reasons to Choose This Product

Excellent high-frequency performance

Low noise and distortion

Reliable and robust design

Wide operating temperature range

RoHS3 compliance

Suitable for a variety of applications