NST65010MW6T1G - onsemi

Manufacturer Part Number

NST65010MW6T1G

Manufacturer

onsemi

Introduction

High-performance dual PNP bipolar junction transistor (BJT) array in a compact SC-88/SC70-6/SOT-363 surface-mount package.

Product Features and Performance

2 PNP transistors in a single package

High current handling capability up to 100 mA

Low collector-emitter saturation voltage

High current gain (hFE) of 220 minimum

Wide frequency bandwidth up to 100 MHz

Wide operating temperature range of -55°C to 150°C

Product Advantages

Compact and efficient package design

Excellent thermal management for high power applications

Reliable and robust performance

Key Technical Parameters

Manufacturer Part Number: NST65010MW6T1G

Package: 6-TSSOP, SC-88, SOT-363

Power Dissipation: 380 mW

Collector-Emitter Breakdown Voltage: 65 V

Collector Current: 100 mA

Collector Cutoff Current: 15 nA

Collector-Emitter Saturation Voltage: 650 mV

Quality and Safety Features

RoHS3 compliant

Reliable and consistent performance

Stringent quality control measures

Compatibility

Suitable for a wide range of electronic circuits and applications

Application Areas

Amplifiers

Switches

Drivers

Logic gates

General-purpose analog and digital circuits

Product Lifecycle

Currently available and in production

Replacements or upgrades may be available in the future

Several Key Reasons to Choose This Product

Compact and efficient package design

High power handling and current capacity

Excellent frequency response and bandwidth

Reliable and robust performance across a wide temperature range

RoHS3 compliance for environmental safety