Manufacturer Part Number
NST846BF3T5G
Manufacturer
onsemi
Introduction
High-performance NPN bipolar junction transistor (BJT) in a small SOT-1123 package, suitable for a wide range of analog and switching applications.
Product Features and Performance
Wide operating temperature range: -55°C to 150°C
Low collector-emitter saturation voltage: 600mV @ 5mA, 100mA
High current gain: 200 @ 2mA, 5V
High transition frequency: 100MHz
Low collector cutoff current: 15nA (max)
Power dissipation: 290mW
Product Advantages
Compact SOT-1123 surface mount package
Excellent high-frequency performance
Robust thermal and electrical characteristics
RoHS-compliant design
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 65V
Collector Current (max): 100mA
Power Dissipation: 290mW
Quality and Safety Features
RoHS3 compliant
Reliable operation within the specified temperature range
Compatibility
Suitable for a wide range of analog and switching applications, including amplifiers, switches, and logic circuits.
Application Areas
Analog and digital circuits
Switching applications
Logic gates
Amplifiers
Product Lifecycle
This product is currently in active production and available for purchase. Replacement or upgrade options may be available in the future.
Key Reasons to Choose This Product
Excellent high-frequency performance
Robust thermal and electrical characteristics
Compact and efficient surface mount package
RoHS-compliant design for environmental compliance
Suitable for a wide range of analog and switching applications